05450360 is referenced by 21 patents and cites 5 patents.

Disclosed herein is a flash type EEPROM which includes a first memory cell array having a plurality of first memory cells, a second memory array having a plurality of memory cells which are smaller in number than the first memory cells, a voltage generator operatively generating an erasing voltage in an erase operation mode, a first transfer gate circuit operatively transferring the erasing voltage to each of the first and a second transfer gate circuit operatively transferring the erasing voltage to each of the second memory cells, the first transfer gate circuit having a current driving capability larger than the current driving capability of the second transfer gate circuit.

Title
Flash EEPROM having memory cell arrays supplied respectively with erasing voltage via transfer gates different in current capability from each other
Application Number
8/179362
Publication Number
5450360
Application Date
January 7, 1994
Publication Date
September 12, 1995
Inventor
Toshiya Sato
Tokyo
JP
Agent
Sughrue Mion Zinn Macpeak & Seas
Assignee
NEC Corporation
JP
IPC
G11C 11/40
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