05445706 is referenced by 7 patents and cites 4 patents.

Group II-VI compound semiconductor crystal containing Zn as group II element or mixed crystal containing the compound semiconductor crystal is etched by an etchant made of H.sub.2 SO.sub.4 aqueous solution dissolved with potassium permanganate KMNO.sub.4. Preferably, an etchant is moved round in a cylindrical vessel by a stirrer, and group II-VI compound semiconductor wafers are held by a jig, disposed generally in parallel with the flow of the etchant, immersed into the etchant, and mirror-etched.

Title
Wet treatment adapted for mirror etching ZnSe
Application Number
8/226281
Publication Number
5445706
Application Date
April 11, 1994
Publication Date
August 29, 1995
Inventor
Tsuyoshi Maruyama
Kawasaki
JP
Hitoshi Tamura
Yokohama
JP
Yasuo Okuno
Yokohama
JP
Agent
Frishauf Holtz Goodman Langer & Chick
Assignee
Kanagawa Academy of Science and Technology
JP
Stanley Electric
JP
IPC
H01L 21/306
B44C 1/22
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