05422513 is referenced by 96 patents and cites 11 patents.

A high density interconnect (HDI) structure having a dielectric multi-layer interconnect structure on a substrate is fabricated by forming a chip well, placing a chip in the well, and connecting the chip to the interconnect structure. Additionally, temperature sensitive chips or devices may be located beneath the dielectric multi-layer interconnect structure. A spacer die may be located in the substrate while the interconnect structure is fabricated and removed after a chip well aligned with the spacer die is formed, in order to accommodate a chip thickness which is greater than the dielectric multi-layer interconnect structure thickness.

Title
Integrated circuit chip placement in a high density interconnect structure
Application Number
962449
Publication Number
5422513
Application Date
October 4, 1993
Publication Date
June 6, 1995
Inventor
Robert J Wojnarowski
Ballston Lake
NY, US
Barry S Whitmore
Utica
NY, US
Raymond A Fillion
Niskayuna
NY, US
Walter M Marcinkiewicz
Niskayuna
NY, US
Agent
Geoffrey H Krauss
Assignee
Martin Marietta Corporation
MD, US
IPC
H01L 29/60
H01L 29/52
H01L 29/44
H01L 23/485
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