05393993 is referenced by 474 patents and cites 4 patents.

A transition crystal structure is disclosed for providing a good lattice and thermal match between a layer of single crystal silicon carbide and a layer of single crystal gallium nitride. The transition structure comprises a buffer formed of a first layer of gallium nitride and aluminum nitride, and a second layer of gallium nitride and aluminum nitride adjacent to the first layer. The mole percentage of aluminum nitride in the second layer is substantially different from the mole percentage of aluminum nitride in the first layer. A layer of single crystal gallium nitride is formed upon the second layer of gallium nitride. In preferred embodiments, the buffer further comprises an epitaxial layer of aluminum nitride upon a silicon carbide substrate.

Title
Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
Application Number
8/166229
Publication Number
5393993
Application Date
December 13, 1993
Publication Date
February 28, 1995
Inventor
Kenneth Irvine
Cary
NC, US
Vladimir Dmitriev
Fuquay-Varina
NC, US
John A Edmond
Apex
NC, US
Agent
Bell Seltzer Park & Gibson
Assignee
Cree Research
NC, US
IPC
H01L 33/00
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