05376580 is referenced by 291 patents and cites 16 patents.

A method of forming a light emitting diode (LED) includes providing a temporary growth substrate that is selected for compatibility with fabricating LED layers having desired mechanical characteristics. For example, lattice matching is an important consideration. LED layers are then grown on the temporary growth substrate. High crystal quality is thereby achieved, whereafter the temporary growth substrate can be removed. A second substrate is bonded to the LED layers utilizing a wafer bonding technique. The second substrate is selected for optical properties, rather than mechanical properties. Preferably, the second substrate is optically transparent and electrically conductive and the wafer bonding technique is carried out to achieve a low resistance interface between the second substrate and the LED layers. Wafer bonding can also be carried out to provide passivation or light-reflection or to define current flow.

Title
Wafer bonding of light emitting diode layers
Application Number
8/36532
Publication Number
5376580
Application Date
March 19, 1993
Publication Date
December 27, 1994
Inventor
John Uebbing
Palo Alto
CA, US
Virginia M Robbins
Los Gatos
CA, US
Dennis C DeFevere
Palo Alto
CA, US
Frank M Steranka
San Jose
CA, US
Fred A Kish
San Jose
CA, US
Assignee
Hewlett Packard Company
CA, US
IPC
H01L 21/20
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