05371418 is referenced by 13 patents and cites 11 patents.

Power FETs having a load at the source side require a gate voltage lying above the drain voltage in order to be driven completely conductive. This can occur with a known pump circuit. In the drive circuit disclosed, the diode connected to the gate terminal of the power FET is a depletion FET whose substrate terminal is applied to the oscillating voltage that is required for the operation of the pump circuit. The cut off voltage is thus synchronously set relative to the oscillating voltage such that low losses arise when loading C.sub.GS and an adequately high inhibit voltage can be built up when loading the pump capacitor.

Title
Drive circuit for a power MOSFET with load at the source side
Application Number
8/95197
Publication Number
5371418
Application Date
July 23, 1993
Publication Date
December 6, 1994
Inventor
Jenoe Tihanyi
Munich
DE
Rainald Sander
Munich
DE
Ludwig Leipold
Munich
DE
Agent
Hill Steadman & Simpson
Assignee
Siemens Aktiengesellschaft
DE
IPC
H03K 17/687
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