05358806 is referenced by 39 patents and cites 2 patents.

A defect of a phase shift mask, which has a phase shifter disposed on a transparent substrate, formed into a predetermined pattern and acting to shift a phase of exposure light transmitted therethrough and an etching stopper disposed between the phase shifter and the transparent substrate, which is resistant to an etching to which the phase shifter is subjected and transparent for exposure light is corrected by selectively etching a defective portion of the phase shifter, having a lacking type defect, with respect to the etching stopper layer along the whole thickness of the phase shifter and by perforating a portion of the etching stopper layer and the transparent substrate positioned under the etched defective portion by a depth which corresponds to a magnitude of an optical path of the phase shifter for the exposure light, the etching being a reactive etching which uses charged particle beam and a reactive gas and, the bottom surface of a portion etched being flattened by utilizing a fact that the phase shifter is selectively etched.

Title
Phase shift mask, method of correcting the same and apparatus for carrying out the method
Application Number
7/854861
Publication Number
5358806
Application Date
March 19, 1992
Publication Date
October 25, 1994
Inventor
Yasuhiro Koizumi
Sayama
JP
Junzou Azuma
Yokohama
JP
Hiroshi Yamaguchi
Fujisawa
JP
Akira Shimase
Yokohama
JP
Fumikazu Itoh
Fujisawa
JP
Satoshi Haraichi
Yokohama
JP
Agent
Antonelli Terry Stout & Kraus
Assignee
Hitachi
JP
IPC
G03F 9/00
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