05356478 is referenced by 227 patents and cites 17 patents.

A plasma cleaning method for removing residues previously formed in a plasma treatment chamber by dry etching layers such as photoresist, barriers, etc., on a wafer. The method includes introducing a cleaning gas mixture of an oxidizing gas and a chlorine containing gas into the chamber followed by performing a plasma cleaning step. The plasma cleaning step is performed by activating the cleaning gas mixture and forming a plasma cleaning gas, contacting interior surfaces of the chamber with the plasma cleaning gas and removing residues on the interior surfaces. The cleaning gas mixture can also include a fluorine-based gas. For instance, the cleaning gas can include Cl.sub.2 and O.sub.2 and optionally CF.sub.4. An advantage of the cleaning method is that it is not necessary to open the plasma treatment chamber. Also, it is possible to completely remove all residues and prevent by-products formed during the cleaning step from remaining after the cleaning step.

Title
Plasma cleaning method for removing residues in a plasma treatment chamber
Application Number
902663
Publication Number
5356478
Application Date
January 3, 1994
Publication Date
October 18, 1994
Inventor
David Liu
San Jose
CA, US
David Arnett
Fremont
CA, US
Ching Hwa Chen
Milpitas
CA, US
Agent
Burns Doane Swecker & Mathis
Assignee
LAM Research Corporation
CA, US
IPC
B08B 7/00
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