05323042 is referenced by 265 patents and cites 4 patents.

In the case of an LDD-structure thin film transistor, an on-current becomes large as impurity concentration of low level impurity source and drain regions is increased. Then, when the impurity concentration is increased to a first impurity concentration, the on-current reaches to a substantially maximum point. On the other hand, a cut-off current I.sub.off becomes substantially minimum when the impurity concentration is decreased to a second impurity concentration. The cut-off current is gradually increased even if the impurity concentration becomes higher or lower than the second impurity concentration. Therefore, impurity concentration of low level impurity source and drain regions of a thin film transistor for a peripheral circuit is set to a first impurity concentration, and that of low concentration impurity source and drain regions of a thin film transistor for a matrix circuit is set to a second impurity concentration.

Title
Active matrix liquid crystal display having a peripheral driving circuit element
Application Number
7/975852
Publication Number
5323042
Application Date
November 13, 1992
Publication Date
June 21, 1994
Inventor
Hiroshi Matsumoto
Hachioji
JP
Agent
Frishauf Holtz Goodman & Woodward
Assignee
Casio Computer
JP
IPC
H01L 29/76
H01L 3/036
H01L 29/04
H01L 27/01
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