05308998 is referenced by 278 patents and cites 4 patents.

An IGFET has differential crystallinity in offset regions near the source-channel and drain-channel boundaries. In one embodiment, an offset region with crystallinity different from that of an adjacent region is provided between the channel and at least one of the source and drain regions. An oxide film may be provided to cover the surface of the gate electrode, formed by anodizing the surface of the gate electrode, and this layer may be used as a mask when forming the crystallinity offset regions.

Title
Insulated gate field effect semiconductor devices having a LDD region and an anodic oxide film of a gate electrode
Application Number
7/933810
Publication Number
5308998
Application Date
August 24, 1992
Publication Date
May 3, 1994
Inventor
Hongyong Zhang
Kanagawa
JP
Yasuhiko Takemura
Kanagawa
JP
Shunpei Yamazaki
Tokyo
JP
Agent
Sixbey Friedman Leedom & Ferguson
Assignee
Semiconductor Energy Laboratory
JP
IPC
H01L 29/76
H01L 27/01
H01L 31/036
H01L 29/04
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