05278100 is referenced by 515 patents and cites 3 patents.

A method of providing a conformal layer of TiSi.sub.x atop a semiconductor wafer within a chemical vapor deposition reactor includes the following steps: a) positioning a wafer within the reactor; b) injecting selected quantities of gaseous Ti(NR.sub.2).sub.4 precursor, gaseous silane and a carrier gas to within the reactor, where R is selected from the group consisting of H and a carbon containing radical, the quantities of Ti(NR.sub.2).sub.4 precursor and silane being provided in a volumetric ratio of Ti(NR.sub.2).sub.4 to silane of from 1:300 to 1:10, the quantity of carrier gas being from about 50 sccm to about 2000 sccm and comprising at least one noble gas; and c) maintaining the reactor at a selected pressure and a selected temperature which are effective for reacting the precursor and silane to deposit a film on the wafer, the film comprising a mixture of TiSi.sub.x and TiN, the selected temperature being from about 100.degree. C. to about 500.degree. C., and the selected pressure being from about 150 mTorr to about 100 Torr.

Title
Chemical vapor deposition technique for depositing titanium silicide on semiconductor wafers
Application Number
7/789585
Publication Number
5278100
Application Date
November 8, 1991
Publication Date
January 11, 1994
Inventor
Gurtej S Sandhu
Boise
ID, US
Trung T Doan
Boise
ID, US
Agent
Wells St John Roberts Gregory & Matkin
Assignee
Micron Technology
ID, US
IPC
H01L 21/441
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