05272399 is referenced by 16 patents and cites 2 patents.

A circuit configuration for limiting current flowing through a power MOSFET includes a voltage divider being connected between drain and source terminals of the power MOSFET and having a node at which a voltage following a drain-to-source voltage of the power MOSFET drops. A control transistor has a load path connected between the gate terminal and the source terminal of the power MOSFET. The control transistor is made conducting as a function of the voltage at the node of the voltage divider if the drain-to-source voltage of the power MOSFET exceeds a predetermined value. A resistor is connected between the gate terminal of the control transistor and the gate terminal of the power MOSFET. A depletion FET has a drain terminal connected to the gate terminal of the control transistor. The source terminal of the depletion FET is connected to the node of the voltage divider. The gate terminal of the depletion FET is connected to the source terminal of the power MOSFET.

Title
Circuit limiting the load current of a power MOSFET
Application Number
8/4970
Publication Number
5272399
Application Date
January 15, 1993
Publication Date
December 21, 1993
Inventor
Rainald Sander
Munchen
DE
Ludwig Leipold
Munchen
DE
Jenoe Tihanyi
Munchen
DE
Agent
Laurence A Greenberg
Herbert L Lerner
Assignee
Siemens Aktiengesellschaft
DE
IPC
H03K 5/08
H03K 3/01
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