05270979 is referenced by 361 patents and cites 5 patents.

Various optimizing techniques are used for erasing semiconductor electrically erasable programmable read only memories (EEPROM). An erase algorithm accomplishes erasing of a group of memory cells by application of incremental erase pulses. Techniques include a 2-phase verification process interleaving between pulse applications; special handling of a sample of cells within each erasable unit group; defects handling; adaptive initial erasing voltages; and single-and hybrid-phase algorithms with sector to sector estimation of erase characteristics by table lookup. Techniques are also employed for controlling the uniformity of program/erase cycling of cells in each erasable unit group. Defects handling includes an adaptive data encoding scheme.

Title
Method for optimum erasing of EEPROM
Application Number
7/670246
Publication Number
5270979
Application Date
March 15, 1991
Publication Date
December 14, 1993
Inventor
Stephen J Gross
Santa Clara
CA, US
Sanjay Mehrotra
Milpitas
CA, US
Daniel C Guterman
Fremont
CA, US
Eliyahou Harari
Los Gatos
CA, US
Agent
Majestic Parsons Siebert & Hsue
Assignee
SunDisk Corporation
CA, US
IPC
G11C 7/00
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