05270247 is referenced by 109 patents and cites 8 patents.

A heterojunction between In-containing compound semiconductors in which the interface thereof is controlled at an atom level is provided by a process of atomic layer epitaxy (ALE) in which hydrogen gas is utilized as a carrier gas and as a purge gas for a separation of source gases. The time for which the purge gas is supplied can be utilized for controlling the ALE.

Title
Atomic layer epitaxy of compound semiconductor
Application Number
7/910766
Publication Number
5270247
Application Date
July 8, 1992
Publication Date
December 14, 1993
Inventor
Kunihiko Kodama
Takarazuka
JP
Nobuyuki Ohtuka
Kawasaki
JP
Masashi Ozeki
Kawasaki
JP
Yoshiki Sakuma
Kawasaki
JP
Agent
Staas & Halsey
Assignee
Fujitsu
JP
IPC
H01L 21/20
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