A method and apparatus for forming a conductive bump on a metal or other conductive surface or layer. A substrate is provided which includes the metal surface, a passivation layer next to the metal surface and an etch stop layer next to the passivation layer. The etch stop and passivation layers have a via therethrough which exposes a portion of the metal surface. At least one sacrificial layer is formed next to the etch stop layer. Each sacrificial layer has a via therethrough which has a larger diameter than, and which is essentially aligned with, the via in the layer located (i) next to the sacrificial layer and (ii) closer to the metal surface. The vias are filled with a conductive paste which is allowed to cure or harden. The sacrificial layer(s) is(are) removed to expose the bump.