05208124 is referenced by 53 patents and cites 2 patents.

Reticle data used to form a reticle pattern is modified to substantially compensate for proximity effects resulting from the diffraction of light by opaque portions of the reticle pattern.

The reticle pattern is thus modified so that the exposed pattern on the wafer results in a desired pattern, wherein isolated features and features in a dense pattern of features formed on the wafer will be identical and have predictable characteristics.

Title
Method of making a mask for proximity effect correction in projection lithography
Application Number
7/671567
Publication Number
5208124
Application Date
March 19, 1991
Publication Date
May 4, 1993
Inventor
Edward Lin
Santa Clara
CA, US
Nader Shamma
Los Altos
CA, US
Frederik Sporon Fiedler
San Mateo
CA, US
Assignee
Hewlett Packard Company
CA, US
IPC
G03F 1/00
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