05206590 is referenced by 296 patents and cites 4 patents.

A magnetoresistive (MR) sensor comprising a first and a second thin film layer of a magnetic material separated by a thin film layer of a non-magnetic metallic material. The first ferromagnetic layer is magnetically soft. The magnetization direction of the first layer of magnetic material is set substantially perpendicular to the magnetization of the second layer of magnetic material at zero applied field, and the magnetization direction of the second layer of magnetic material is fixed. A current flow is produced through the MR sensor, and the variations in voltage across the MR sensor are sensed due to changes in resistance of the MR sensor produced by rotation of the magnetization in the first layer of magnetic material as a function of the magnetic field being sensed. The variation of the resistance with the angle between the magnetizations of the first and second layers of magnetic material has been defined as the spin valve (SV) effect. It is also shown that, by a suitable direction of the current with respect to the fixed magnetization, the (SV) magnetoresistance can be added constructively to the usual anisotropic magnetoresistance.

Title
Magnetoresistive sensor based on the spin valve effect
Application Number
7/625343
Publication Number
5206590
Application Date
December 11, 1990
Publication Date
April 27, 1993
Inventor
Dennis R Wilhoit
Morgan Hill
CA, US
Virgil S Speriosu
San Jose
CA, US
Stuart S P Parkin
San Jose
CA, US
Daniele Mauri
San Jose
CA, US
Steven E Lambert
San Jose
CA, US
Bruce A Gurney
Santa Clara
CA, US
Bernard Dieny
San Jose
CA, US
Agent
Leslie G Murray
Otto Schmid Jr
Assignee
International Business Machines Corporation
NY, US
IPC
G11B 5/39
G11C 19/08
H01L 43/08
G01R 33/02
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