05198371 is referenced by 100 patents and cites 6 patents.

A new-type silicon material is produced by hydrogen ion implantation and subsequent annealing, the annealing being preferably in two steps. The present invention raises surface mobility of a silicon wafer and produces a buried high-resistivity layer beneath a silicon surface layer. The resulting products are particularly useful for the improvement of yield and speed and radiation hardness of very large scale integrated circuits.

Title
Method of making silicon material with enhanced surface mobility by hydrogen ion implantation
Application Number
7/587227
Publication Number
5198371
Application Date
September 24, 1990
Publication Date
March 30, 1993
Inventor
Jianming Li
Beijing
CN
Agent
Michael G Berkman
Assignee
Biota
NY, US
IPC
H01L 21/322
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