A method of fabricating phase shifting reticles that can be used as a mask in photolithographic processes such as semiconductor wafer patterning. An opaque material is deposited onto a quartz substrate to a predetermined thickness. The opaque material is then patterned with openings to form a pattern of opaque light blockers and light transmission openings on the substrate. A phase shifter material is then deposited over the opaque light blockers and into the light transmission openings. This forms a pattern of rim phase shifters on the sidewalls of each light blocker with a light transmission opening between adjacent light blockers. In use, in photopatterning a semiconductor wafer, phase canceling produced by light diffracted through the rim phase shifters and by the opaque light blockers enhances the edge contrast of a pattern produced by the opaque light blockers.