05174854 is referenced by 3 patents and cites 5 patents.

A ZnSe source crystal is treated in a Se vapor pressure peaks are obtained when the Se pressure is 6 to 9 atoms dissolved in a Zn solvent to the saturation concentration at a high temperature portion in the solution. A ZnSe single crystal is grown on an underlie substrate placed at a low temperature portion in the solution. When the temperature of the vapor pressure treatment is 1050.degree. C., excellent photoluminescence peaks are obtained when the Se pressure is 6 to 9 atoms.

Title
Crystal growth of group II-VI compound semiconductor
Application Number
7/697076
Publication Number
5174854
Application Date
May 8, 1991
Publication Date
December 29, 1992
Inventor
Yasuo Okuno
Yokohama
JP
Michihiro Sano
Odawara
JP
Agent
Frishauf Holtz Goodman & Woodward
Assignee
Stanley Electric
JP
IPC
C30B 7/00
View Original Source