05116784 is referenced by 22 patents and cites 14 patents.

Si.sub.2 H.sub.6 and PH.sub.3 are introduced into a heated reaction tube in which a plurality of substrates are contained under vacuum pressure, thereby forming phosphor-doped silicon films on the substrates. By changing the flow of Si.sub.2 H.sub.6, a first layer consisting of a silicon film containing phosphor of low density, a second layer substantially consisting of phosphor, and a third layer consisting of substantially the same composition as that of the first layer are deposited in the order mentioned. Thereafter, the first through third layers are heated, thereby diffusing phosphor contained in the second layer. Thus, an integral film of uniform impurity density is formed from the first through third layers.

Title
Method of forming semiconductor film
Application Number
7/773430
Publication Number
5116784
Application Date
October 9, 1991
Publication Date
May 26, 1992
Inventor
Harunori Ushikawa
Kofu
JP
Agent
Oblon Spivak McClelland Maier & Neustadt
Assignee
Tokyo Electron
JP
IPC
C23C 16/00
H01L 21/31
H01L 21/02
H01L 21/00
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