05111253 is referenced by 162 patents and cites 21 patents.

A semiconductor power switching device comprises a multicellular FET structure with a Schottky barrier diode structure interspersed therewith with at least some of the FET cells being free of Schottky barrier portions. The ratio of Schottky barrier contact area to FET cell area in the overall device may be adjusted to tailor the device for operation at specific current densities.

Title
Multicellular FET having a Schottky diode merged therewith
Application Number
348981
Publication Number
5111253
Application Date
August 28, 1990
Publication Date
May 5, 1992
Inventor
Hsueh Rong Chang
Scotia
NY, US
Bantval J Baliga
Raleigh
NC, US
Charles S Korman
Schenectady
NY, US
Agent
James C Davis Jr
Marvin Snynder
Assignee
General Electric Company
NY, US
IPC
H01L 29/78
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