05106775 is referenced by 230 patents and cites 21 patents.

A semiconductor memory comprises a switching device and a charge-storage device disposed at the upper and lower sides, respectively, of each of semiconductor islands. The islands are formed on a semiconductor substrate that is completely isolated from the semiconductor substrate by an insulator. The switching device and charge-storage device are substantially the same width. The memory cell structure is extremely small. The cell structure is highly resistant to alpha-particles and is formed self-aligned. During manufacture, the SiO.sub.2 island is oxidized adjacent its lower end to insulate the island from the substrate.

Title
Process for manufacturing vertical dynamic random access memories
Application Number
279350
Publication Number
5106775
Application Date
July 30, 1990
Publication Date
April 21, 1992
Inventor
Hideo Sunami
Tokyo
JP
Yoshifumi Kawamoto
Kanagawa
JP
Toru Kaga
Saitama
JP
Agent
Fay Sharpe Beall Fagan Minnich & McKee
Assignee
Hitachi
JP
IPC
H01L 21/70
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