05095344 is referenced by 730 patents and cites 22 patents.

Structures, methods of manufacturing and methods of use of electrically programmable read only memories (EPROM) and flash electrically erasable and programmable read only memories (EEPROM) include split channel and other cell configurations. An arrangement of elements and cooperative processes of manufacture provide self-alignment of the elements. An intelligent programming technique allows each memory cell to store more than the usual one bit of information. An intelligent erase algorithm prolongs the useful life of the memory cells. Use of these various features provides a memory having a very high storage density and a long life, making it particularly useful as a solid state memory in place of magnetic disk storage devices in computer systems.

Highly compact EPROM and flash EEPROM devices
Application Number
Publication Number
Application Date
June 8, 1988
Publication Date
March 10, 1992
Eliyahou Harari
2320 Friars La., Los Altos, 94022
Majestic Parsons Siebert & Hsue
H01L 29/40
H01L 29/10
H01L 27/01
H01L 29/78
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