A high-performance single-crystal silicon tactile imaging array organized in a X-Y matrix of capacitor elements. Metallic column lines are formed on a glass support substrate, while the row lines are formed from a contiguous chain of doubly-supported bridge structures, with one such structure for each sensing element. All of the bridge structures are simultaneously fabricated from a single-crystal silicon semiconductor wafer using a two-step boron diffusion process, followed by a silicon-to-glass electrostatic bonding step and subsequent unmasked wafer dissolution. Each bridge structure has a thick center plate for the sense capacitor supported by thinner beams connected to adjacent row single-crystal silicon support rails bonded to the glass substrate. The force sensitivity and maximum operating range of the tactile imager can be selected over a very wide range by appropriately setting the dimensions of these thinner support beams. The resulting imager is rugged, of high resolution and high density, and is inherently stable over time and temperature.