05043940 is referenced by 498 patents and cites 11 patents.

A memory system made up of electrically programmable read only memory (EPROM) or flash electrically erasable and programmable read only memory (EEPROM) cells. An intelligent programming technique allows each memory cell to store more than the usual one bit of information. An intelligent erase algorithm prolongs the useful life of the memory cells. Use of these various features provides a memory having a very high storage density and a long life, making it particularly useful as a solid state memory in place of magnetic disk storage devices in computer systems.

Title
Flash EEPROM memory systems having multistate storage cells
Application Number
204175
Publication Number
5043940
Application Date
July 17, 1989
Publication Date
August 27, 1991
Inventor
Eliyahou Harari
104 Auzerais Ct., Los Gatos, 95030
CA, US
Agent
Majestic Parsons Siebert & Hsue
IPC
G11C 11/56
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