05040036 is referenced by 17 patents and cites 2 patents.

An EEPROM structure requiring only two poly layers that utilizes hot electrons from the substrate for programming and poly-to-poly electron tunnelling for erasure. The structure is also advantageously utilized in an Ultra Violet Light Erasable PROM. The structure allows programming and erasure by electron tunnelling only.

Title
Trench-isolated self-aligned split-gate EEPROM transistor and memory array
Application Number
152702
Publication Number
5040036
Application Date
March 22, 1989
Publication Date
August 13, 1991
Inventor
Emanuel Hazani
1210 Sesame Dr., Sunnyvale, 94087
CA, US
IPC
G11C 11/40
H01L 27/04
H01L 29/78
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