05027180 is referenced by 88 patents and cites 8 patents.

A double gate static induction thyristor comprises a semiconductor substrate, a first gate region formed at a first principal surface of the substrate, and a first semiconductor region of a first conduction type formed on the same first principal surface. A second gate region is formed at a second principal surface of the substrate, and a second semiconductor region of a second conduction type is formed on the same second principal surface. Gate electrodes are formed on the first and second gate regions, and main electrodes are formed on the first and second semiconductor regions, so that portions of the semiconductor regions surrounded by the gate regions form a current path between the main electrodes. Further, impurity is deeply diffused in portions of the first and second gate regions formed with the gate electrodes.

Title
Double gate static induction thyristor
Application Number
132002
Publication Number
5027180
Application Date
October 18, 1989
Publication Date
June 25, 1991
Inventor
Hisao Kondoh
Osaka
JP
Jun ichi Nishizawa
Miyagi
JP
Agent
Kerkam Stowell Kondracki & Clarke
Assignee
Mitsubishi Electric Corporation
JP
IPC
H01L 29/74
View Original Source