05019879 is referenced by 33 patents and cites 4 patents.

The flash EEPROM memory device with the floating gate that is over the channel area and insulated from the channel by 200 to 1000 A of gate oxide, and that is also over the thin tunnel dielectric area at the source and insulated from the source by 70 A to 200 A of tunnel dielectric. Another improvement of the proposed version of the flash EEPROM memory device is that the tunnel dielectric area is small and self aligned to the floating gate.

Electrically-flash-erasable and electrically-programmable memory storage devices with self aligned tunnel dielectric area
Application Number
Publication Number
Application Date
March 15, 1990
Publication Date
May 28, 1991
Te Long Chiu
1188 Spring Hill Way, San Jose, 95120
H01L 21/235
H01L 27/115
View Original Source