05018479 is referenced by 44 patents and cites 9 patents.

A remote plasma enhanced CVD apparatus and method for growing semiconductor layers on a substrate, wherein an intermediate feed gas, which does not itself contain constituent elements to be deposited, is first activated in an activation region to produce plural reactive species of the feed gas. These reactive species are then spatially filtered to remove selected of the reactive species, leaving only other, typically metastable, species which are then mixed with a carrier gas including constituent elements to be deposited on the substrate. During this mixing, the selected spatially filtered reactive species of the feed gas chemically interacts, i.e., partially dissociates and activates, in the gas phase, the carrier gas, with the process variables being selected so that there is no back-diffusion of gases or reactive species into the feed gas activation region. The dissociated and activated carrier gas along with the surviving reactive species of the feed gas then flows to the substrate. At the substrate, the surviving reactive species of the feed gas further dissociate the carrier gas and order the activated carrier gas species on the substrate whereby the desired epitaxial semiconductor layer is grown on the substrate.

Title
Remote plasma enhanced CVD method and apparatus for growing an epitaxial semconductor layer
Application Number
100477
Publication Number
5018479
Application Date
August 10, 1989
Publication Date
May 28, 1991
Inventor
Ronald A Rudder
Cary
NC, US
Robert Hendry
Hillsborough
NC, US
Robert J Markunas
Chapel Hill
NC, US
Agent
Oblon Spivak McClelland Maier & Neustadt
Assignee
Reserach Triangle Institute
NC, US
IPC
C23C 16/00
View Original Source