04981549 is referenced by 52 patents and cites 1 patents.

A silicon single-crystal growing method is disclosed which immerses a seed crystal in a silicon melt and pulls the seed crystal from the melt to thereby grow a silicon single-crystal, and in which the dwelling time of the silicon single-crystal, which is being pulled in a temperature range of between 1,050.degree. to 850.degree. C., is set to be no longer than 140 min. The apparatus suitable for practicing the above method has a crucible, a pulling mechanism, and a temperature control shell. The temperature control shell is located above the crucible for cooling said silicon single-crystal at a cooling rate such that the dwelling time of said silicon single-crystal, which is being pulled in a temperature range of between 1,050.degree. to 850.degree. C., is not longer than 140 min.

Title
Method and apparatus for growing silicon crystals
Application Number
7/313799
Publication Number
4981549
Application Date
February 22, 1989
Publication Date
January 1, 1991
Inventor
Hisashi Furuya
Itami
JP
Akira Higuchi
Omiya
JP
Yasushi Shimanuki
Hasuda
JP
Yoshiaki Banba
Urawa
JP
Koutaro Shimizu
Omiya
JP
Ichiro Yamashita
Omiya
JP
Agent
Scully Scott Murphy & Presser
Assignee
Japan Silicon
JP
Mitsubishi Kinzoku Kabushiki Kaisha
JP
IPC
C30B 35/00
C30B 33/00
C30B 29/06
C30B 15/14
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