04961194 is referenced by 20 patents and cites 6 patents.

An ohmic contact layer is provided between an n-GaAs/n-AlGaAs/undoped GaAs double-heterojunction structure and source/drain electrodes in a high electron mobility transistor. The ohmic contact layer comprises In.sub.x Ga.sub.1-x As or Ge. The ohmic contact layer has a function of considerably reducing a specific contact resistance of a barrier formed at an interface between the ohmic contact layer and the source and drain electrodes. Thereby, a nonalloyed ohmic contact is formed between the source and drain electrodes and source and drain regions formed in the undoped GaAs layer.

Title
Compound semiconductor device having nonalloyed ohmic contacts
Application Number
169890
Publication Number
4961194
Application Date
December 21, 1989
Publication Date
October 2, 1990
Inventor
Seishi Notomi
Yamato
JP
Takashi Mimura
Machida
JP
Shigeru Kuroda
Sagamihara
JP
Agent
Staas & Halsey
Assignee
Fujitsu
JP
IPC
H01L 29/80
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