04960732 is referenced by 98 patents and cites 5 patents.

A stable, low resistance contact is formed in a contact hole (16) through an insulating layer (14), e.g., silicon dioxide, formed on a surface of a semiconductor substrate (12), e.g., silicon, to a portion of a doped region (10) in said semiconductor surface. The contact comprises (a) an adhesion and contacting layer (18) of titanium formed along the walls of the insulating layer and in contact with the portion of the doped region; (b) a barrier layer (20) formed over the adhesion and contacting layer; and (c) a conductive material (22) formed over the barrier layer and at least substantially filling said contact hole. A patterned metal layer (26) forms an ohmic contact interconnect to other devices and external circuitry.

The adhesion and contacting layer and barrier layer are either physically or chemically vapor deposited onto the oxide surface. The conductive layer comprises one of CVD or bias sputtered tungsten, molybdenum or in situ doped CVD polysilicon.

The contact of the invention avoids the problems of encroachment at the oxide-silicon interface and worm holes associated with other contact schemes but retains process simplicity.

Title
Contact plug and interconnect employing a barrier lining and a backfilled conductor material
Application Number
16429
Publication Number
4960732
Application Date
November 14, 1989
Publication Date
October 2, 1990
Inventor
Mohammad Farnaam
Santa Clara
CA, US
Craig S Sander
Mountain View
CA, US
Richard K Klein
Mountain View
CA, US
Jack Sliwa
Los Altos Hills
CA, US
Pankaj Dixit
Sunnyvale
CA, US
Agent
David W Collins
Assignee
Advanced Micro Devices
CA, US
IPC
H01L 21/48
H01L 21/44
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