04956816 is referenced by 25 patents and cites 6 patents.

This invention provides a non-volatile semiconductor memory having a first node and a second node, the second node having a ground potential. The invention includes a plurality of non-volatile memory cells each having a drain and a threshold potential, the cells, for storing data written into the cells at a predetermined normal writing voltage. A plurality of bit lines, each memory cell being connected to one of the bit lines, transfer data to and from the memory cells. A circuit connected to the bit lines simultaneously tests the memory cells of all the bit lines at the normal writing voltage to detect changes in the threshold potential.

Title
Non-volatile semiconductor memory having improved testing circuitry
Application Number
29763
Publication Number
4956816
Application Date
May 30, 1989
Publication Date
September 11, 1990
Inventor
Nobuaki Otsuka
Yokohama
JP
Shinji Saito
Yokohama
JP
Sumio Tanaka
Tokyo
JP
Shigeru Atsumi
Tokyo
JP
Agent
Finnegan Henderson Farabow Garrett and Dunner
Assignee
Kabushiki Kaisha Toshiba
JP
IPC
G11C 29/00
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