04951602 is referenced by 56 patents and cites 4 patents.

An apparatus for continuously preparing semiconductor devices each comprising a plurality of semiconductor layers being stacked on a moving substrate web; said apparatus comprising a plurality of film-forming chambers by a number equal to the number of said stacked semiconductor layers, each of said film-forming chambers having a film-forming space and beingprovided with means For evacuating said film-forming space, means for supporting said substrate web in said film-forming space, means for maintaining said substrate web at a desired temperature and means for supplying a film-forming raw material gas into said film-forming space; each of said film-forming chambers being provided with a plasma-generating chamber for generating a plasma reactive with said film-forming raw material gas to cause the formation of a semiconductior film on said substrate web in said film-forming space; said plasma-generating chamber comprising a microwave permeable bell jar disposed in a cavity resonator integrated with two impedance matching circuits in a microwave circuit, said plasma-generating chamber being provided with a porous metal thin plate adjacent to said means for supplying a film-forming raw material gas, said plasma-generating chamber being provided with means for supplying a plasma-generating raw material gas selected from the group consisting of a hydrogen gas and a gaseous mixture composed of a hydrogen gas and a rare gas into said plasma-generating chamber; said apparatus being provided with a substrate web pay-out chamber provided with a mechanism for paying out said substrate web and a substrate take-up chamber provided with a mechanism for taking up said substrate web; said apparatus being provided with a substrate web-processing chamber at least between said substrate web pay-out chamber and the first film-forming chamber; each two of said chambers being connected by means of a connection pipe through which said substrate web can be moved; and said connection pipe being provided with means for preventing the gas of one of said chambers from entering into other chamber with an inert gas.

Title
Microwave plasma chemical vapor deposition apparatus for continuously preparing semiconductor devices
Application Number
7/442511
Publication Number
4951602
Application Date
November 28, 1989
Publication Date
August 28, 1990
Inventor
Masahiro Kanai
Tokyo
JP
Agent
Fitpatrick Cella Harper & Scinto
Assignee
Canon Kabushiki Kaisha
JP
IPC
C23C 16/50
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