04946547 is referenced by 399 patents and cites 17 patents.

The invention is a method of forming a substantially planar surface on a monocrystalline silicon carbide crystal by exposing the substantially planar surface to an etching plasma until any surface or subsurface damage caused by any mechanical preparation of the surface is substantially removed. The etch is limited, however, to a time period less than that over which the plasma etch will develop new defects in the surface or aggravate existing ones, and while using a plasma gas and electrode system that do not themselves aggravate or cause substantial defects in the surface.

Title
Method of preparing silicon carbide surfaces for crystal growth
Application Number
7/421375
Publication Number
4946547
Application Date
October 13, 1989
Publication Date
August 7, 1990
Inventor
John A Edmond
Apex
NC, US
Hua Shuang Kong
Raleigh
NC, US
John W Palmour
Raleigh
NC, US
Agent
Bell Seltzer Park & Gibson
Assignee
Cree Research
NC, US
IPC
C03C 25/06
C03C 15/00
B44C 1/22
H01L 2/306
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