04942450 is referenced by 18 patents and cites 5 patents.

A semiconductor memory device having a redundancy memory cell array is disclosed. UV-PROM's are employed as a programming means in the redundancy control section. A first impurity region is formed in the substrate and the control gate electrode of the UV-PROM is led out through the first impurity region. A second impurity region is formed in the substrate and crosses the first impurity region, and the floating gate electrode of the UV-PROM is covered by a metallic film which is contacted to the second impurity region.

Title
Semiconductor memory device having non-volatile memory transistors
Application Number
7/216588
Publication Number
4942450
Application Date
July 8, 1988
Publication Date
July 17, 1990
Inventor
Shinichi Iwashita
Tokyo
JP
Agent
Sughrue Mion Zinn Macpeak & Seas
Assignee
NEC Corporation
JP
IPC
H01L 25/04
H01L 23/48
H01L 29/34
H01L 29/78
View Original Source