04941026 is referenced by 275 patents and cites 10 patents.

An improved conductivity vertical channel semiconductor device includes an insulated gate electrode disposed adjacent a substantial portion of the voltage supporting region. In response to an appropriate bias, the control electrode couples to the electric field originating on charges within the voltage supporting region to reorient the electric field associated with those charges toward the gate electrode and transverse to the direction of current flow through the device. Improved control of the electric field within the voltage supporting region allows the doping concentration, and hence the conductivity of the channel, to be improved without a concomitant decrease in breakdown voltage. Accordingly, the channel width and cell repeat distance of the improved device can be reduced, allowing for an improved current density to be established throughout an overall device cell structure. The charge control region of the voltage supporting layer exhibits an aspect ratio of 0.5.

Title
Semiconductor devices exhibiting minimum on-resistance
Application Number
938692
Publication Number
4941026
Application Date
August 26, 1988
Publication Date
July 10, 1990
Inventor
Victor A K Temple
Clifton Park
NY, US
Agent
Marvin Snyder
James C Davis Jr
Robert Ochis
Assignee
General Electric Company
NY, US
IPC
H01L 29/78
View Original Source