04904611 is referenced by 45 patents and cites 2 patents.

A method of forming large grain polycrystalline films by deep ion implantation into a composite structure, comprising a layer of amorphous semiconductor material upon an insulating substrate. Implantation is of a given ion species at an implant energy and dosage sufficient to distrupt the interface between the amorphous layer and the substrate and to retard the process of nucleation in subsequent random crystallization upon thermal annealing.

Title
Formation of large grain polycrystalline films
Application Number
98259
Publication Number
4904611
Application Date
November 25, 1988
Publication Date
February 27, 1990
Inventor
Tiao Yuan Huang
Cupertino
CA, US
I Wei Wu
San Jose
CA, US
Anne Chiang
Cupertino
CA, US
Agent
Serge Abend
Assignee
Xerox Corporation
CT, US
IPC
H01L 21/265
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