04901133 is referenced by 43 patents and cites 6 patents.

A film for hermetically passivating monocrystalline silicon includes sequential layers of undoped amorphous silicon, oxygen doped polycrystalline silicon, silicon rich oxynitride, and silicon nitride, and may be overlaid with an organic bulk dielectric such as polyimide. The inorganic film accurately sets the monocrystalline surface Fermi potential, independent of ambient electrical, mechanical, thermal, ionic, and moisture conditions. A method for depositing the amorphous silicon and the oxygen doped polycrystalline silicon layers of the film includes sequentially reacting monosilane in an inert carrier gas, such as helium or argon, and nitrous oxide. The layers are blended by varying the deposition temperature, the nitrous oxide flow rate, the monosilane flow rate, the monosilane dilution, and the inert carrier gas species. The layers are annealed to locally segregate the oxygen, to grow the grains to the proper size, and to set the final recombination velocity of the monocrystalline region.

Title
Multilayer semi-insulating film for hermetic wafer passivation and method for making same
Application Number
6/847357
Publication Number
4901133
Application Date
April 2, 1986
Publication Date
February 13, 1990
Inventor
Susan R Wilson
Richardson
TX, US
Patrick A Curran
Plano
TX, US
Agent
N Rhys Merrett
Melvin Sharp
Gary C Honeycutt
Assignee
Texas Instruments Incorporated
TX, US
IPC
H01L 29/04
H01L 29/34
H01L 45/00
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