04897154 is referenced by 17 patents and cites 9 patents.

A post dry etching process for restoring wafers damaged by dry etching such as RIE, comprising the steps of removing any dry etch residue layer from the etched portions of the wafer and forming an oxide on those etched portions; rapid thermal annealing the wafer to drive the oxygen from the oxide layer down into the wafer by a small amount, to getter impurities to this oxide layer, and to restore crystallinity below the oxide layer; and removing the oxide layer via an HF bath or a low powder dry etch process.

Title
Post dry-etch cleaning method for restoring wafer properties
Application Number
6/882116
Publication Number
4897154
Application Date
July 3, 1986
Publication Date
January 30, 1990
Inventor
Xiao Chun Mu
State College
PA, US
Stephen J Fonash
State College
PA, US
Satya N Chakravarti
Hopewell Junction
NY, US
Agent
William T Ellis
Assignee
International Business Machines Corporation
NY, US
IPC
H01L 21/306
C23F 1/00
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