04895780 is referenced by 57 patents and cites 1 patents.

In order to solve the problem of the proximity effects which occurs in the fabrication of integrated circuit devices, a facile method is provided for automatically creating a new pattern in which variably spaced windage correction is applied over the mask. This permits the utilization of conventional design fabrication rules and systems without the concomitant problem of producing small feature sizes in isolated structures. The method produces highly desirable chip masks and is readily implemented on commercially available CAD systems presently being employed for the production of circuit masks. The method is automatic and extremely easily implemented.

Title
Adjustable windage method and mask for correction of proximity effect in submicron photolithography
Application Number
49744
Publication Number
4895780
Application Date
October 25, 1988
Publication Date
January 23, 1990
Inventor
Kenneth J Polasko
Latham
NY, US
Ernest W Balch
Ballston Spa
NY, US
Dale M Brown
Schenectady
NY, US
Joseph M Pimbley
Schenectady
NY, US
Paul A Frank
Albany
NY, US
Yoav Nissan Cohen
Schenectady
NY, US
Agent
Marvin Snyder
James C Davis Jr
Robert Ochis
Assignee
General Electric Company
NY, US
IPC
G03F 1/00
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