04876220 is referenced by 385 patents and cites 18 patents.

A programmable low impedance interconnect diode element is disclosed having a lower electrode formed of a semiconductor material of a first conductivity type covered by an insulating dielectric layer which may be in a preferred embodiment comprised of an initial layer of silicon dioxide, a second layer of silicon nitride and a third layer of silicon dioxide, covered by a layer of semiconductor material of a second conductivity type.

A programmable read only memory array and a programmable logic array comprising a plurality of the above-described cells are also disclosed.

Title
Method of making programmable low impedance interconnect diode element
Application Number
864038
Publication Number
4876220
Application Date
November 13, 1987
Publication Date
October 24, 1989
Inventor
John L McCollum
Saratoga
CA, US
Esmat Z Hamdy
Fremont
CA, US
Amr M Mohsen
Saratoga
CA, US
Agent
Lyon & Lyon
Assignee
Actel Corporation
CA, US
IPC
H01L 21/465
H01L 21/22
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