04876218 is referenced by 103 patents and cites 3 patents.

The invention relates to a method of growing a GaAs film on the surface of a Si or GaAs substrate by exposing the growing surface of the substrate in a vacuum to at least one vapor beam containing the Ga elementary component of the GaAs compound, and to at least one vapor beam containing the As elementary component of the GaAs compound. The method is characterized by the steps of (A) growing a GaAs buffer layer by alternately applying the elements of the GaAs compound to the surface of a substrate heated to a first temperature one atom layer at a time, whereby in the formation of each atom layer the growing surface is exposed to a vapour beam containing one elementary component of the GaAs compound only; and (B) heating the substrate to a second temperature higher than the first temperature, and growing another GaAs layer on the buffer layer by applying both of the elementary components of the GaAs compound simultaneously.

Title
Method of growing GaAs films on Si or GaAs substrates using ale
Application Number
7/248845
Publication Number
4876218
Application Date
September 26, 1988
Publication Date
October 24, 1989
Inventor
Arto Salokatve
Tampere
FI
Jukka Varrio
Tampere
FI
Harry Asonen
Tampere
FI
Markus Pessa
Tampere
FI
Agent
Finnegan Henderson Farabow Garrett & Dunner
Assignee
Oy Nokia
FI
IPC
H01L 21/203
H01L 21/20
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