Solid state image sensor United States Patent 04862237

04862237 is referenced by 95 patents and cites 7 patents.

A solid state image sensor including a plurality of sensing cells, each formed of a switching transistor and a thin film sensing device, arranged in a line or a matrix. The switching transistor is a thin film transistor (TFT) of polycrystalline silicon and the thin film sensing device utilizes a layer of amorphous silicon formed on a lower electrode which is electrically connected to the drain of the switching.

Title
Solid state image sensor
Application Number
569641
Publication Number
4862237
Application Date
October 4, 1988
Publication Date
August 29, 1989
Inventor
Shinji Morozumi
Suwa
JP
Agent
Blum Kaplan
Assignee
Seiko Epson Corporation
JP
IPC
H01L 27/14
View Original Source

Citations: 95 (view full list)

  1. Shunpei Yamazaki, Yasuhiko Takemura: Electro-optical device having silicon nitride interlayer insulating film. Semiconductor Energy Laboratory Company, Jeffrey L Costellia, Nixon Peabody, March 6, 2001: US06198133 (266 worldwide citation)
  2. Haruo Wakai, Nobuyuki Yamamura, Syunichi Sato, Minoru Kanbara: Thin film transistor array having single light shield layer over transistors and gate and drain lines. Casio Computer, Frishauf Holtz Goodman & Woodward, July 5, 1994: US05327001 (193 worldwide citation)
  3. Haruo Wakai, Nobuyuki Yamamura, Syunichi Sato, Minoru Kanbara: Thin film transistor. Casio Computer, Frishauf Holtz Goodman & Woodward, October 8, 1991: US05055899 (164 worldwide citation)
  4. Shunpei Yamazaki: Electro-optical device and method for manufacturing the same. Semiconductor Energy Laboratory, Eric J Robinson, Sixbey Friedman Leedom & Ferguson PC, February 8, 2000: US06023075 (160 worldwide citation)
  5. Shunpei Yamazaki: Electro-optical device and method for manufacturing the same. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office P C, October 3, 2006: US07115902 (134 worldwide citation)
  6. Shunpei Yamazaki: Semiconductor device having crystalline silicon clusters. Semiconductor Energy Laboratory, Eric J Robinson, Nixion Peabody, June 26, 2001: US06252249 (134 worldwide citation)
  7. Shunpei Yamazaki, Akira Mase, Masaaki Hiroki, Yasuhiko Takemura, Hongyong Zhang, Hideki Uochi, Hideki Nemoto: Semiconductor device having interlayer insulating film and method for forming the same. Semiconductor Energy Laboratory, Eric J Robinson, Sixbey Friedman Leedom & Ferguson P C, January 11, 2000: US06013928 (134 worldwide citation)
  8. Shunpei Yamazaki: Electro-optical device. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office P C, June 27, 2006: US07067844 (130 worldwide citation)
  9. Shunpei Yamazaki: Electro-optical device and method for manufacturing the same. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office P C, August 29, 2006: US07098479 (126 worldwide citation)
  10. Shunpei Yamazaki: Electro-optical device and method for manufacturing the same. Semiconductor Energy Laboratory, Eric J Robinson, Nixon Peabody, October 23, 2001: US06306213 (124 worldwide citation)

References: 7

  1. Moshe Mazin, William E Engeler: Dynamic shift register utilizing CMOS dual gate transistors. General Electric Company, Julius J Zaskalicky, James C Davis Jr, Marvin Snyder, September 18, 1984: US04472821 (14 worldwide citation)
  2. Norio Koike, Iwao Takemoto, Shinya Ohba, Masaharu Kubo, Shuhei Tanaka: Solid-state imaging device. Hitachi, Hitachi Denshi Kabushiki Kaisha, Craig & Antonelli, September 16, 1980: US04223330 (17 worldwide citation)
  3. Norio Koike, Toshihisa Tsukada, Haruhisa Ando, Hideaki Yamamoto, Tadaaki Hirai, Masaharu Kubo, Eiichi Maruyama, Toru Baji, Yukio Takasaki, Shusaku Nagahara: Solid-state imaging device. Hitachi, Craig and Antonelli, April 6, 1982: US04323912 (18 worldwide citation)
  4. June, 1965: US3191061
  5. August, 1967: US3339075
  6. November, 1975: DE2512373A
  7. April, 1983: JP58-67068A