04861731 is referenced by 10 patents and cites 26 patents.

A semiconductor power device with bipolar regenerative switching characteristics provides insulated gate structures for controlling device turn-on and turn-off. Rapid turn-off is achieved in part by a lateral field effect pinch resistance and a vertical field effect pinch resistance produced by an electrically floating structure. The device is electrically isolated by layer of dielectric which allows it to be easily integrated with other circuit elements. The device can be controlled by low current and low positive voltages which provides for simpler interfacing and better electrical compatibility with other circuits in an automotive system. A method of manufactuing this device is also provided.

Title
Method of fabricating a lateral dual gate thyristor
Application Number
7/151534
Publication Number
4861731
Application Date
February 2, 1988
Publication Date
August 29, 1989
Inventor
Jayant K Bhagat
Troy
MI, US
Agent
Robert J Wallace
Assignee
General Motors Corporation
MI, US
IPC
H01L 49/00
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