04855017 is referenced by 165 patents and cites 11 patents.

A plasma dry etch process for trench etching in single slice RIE etch reactors wherein a selective sidewall passivation is accomplished to control the profile of the trench being etched. The process comprises methods of passivating the sidewall by passivation on a molecular scale and by passivation by a veneer type passivation comprising buildup of a macroscopic residue over the surface of the sidewall. Several methods are disclosed for forming and shaping the passivating layers (both mono-atomic and bulk). By carefully controlling the composition and shape of the sidewall passivating veneer in conjunction with other etch factors, the desired trench profiles can be achieved.

Title
Trench etch process for a single-wafer RIE dry etch reactor
Application Number
730701
Publication Number
4855017
Application Date
September 8, 1988
Publication Date
August 8, 1989
Inventor
Monte A Douglas
Coppell
TX, US
Agent
Melvin Sharp
James T Comfort
Thomas W DeMond
Assignee
Texas Instruments Incorporated
TX, US
IPC
C03C 25/06
C03C 15/00
B44C 1/22
H01L 21/306
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