04807016 is referenced by 210 patents and cites 5 patents.

An etchant of PSG (14) or BPSG with high selectivity to substantially undoped oxide (12) includes a fluorine-liberating compound and a fluorine-scavenging compound. The fluorine-liberating compound is preferably a perfluorinated inorganic compound, and the fluorine-scavenging compound is preferably a hydrogen-liberating compound such as hydrogen. A particularly preferred inorganic fluorine-liberating compound is nitrogen trifluoride. In an exemplary embodiment, etch rate ratios of PSG to undoped oxide as high as 11 to 1 were obtained.

Title
Dry etch of phosphosilicate glass with selectivity to undoped oxide
Application Number
755140
Publication Number
4807016
Application Date
November 20, 1987
Publication Date
February 21, 1989
Inventor
Monte A Douglas
Coppell
TX, US
Agent
Melvin Sharp
Leo N Heiting
Rodney M Anderson
Assignee
Texas Instruments Incorporated
TX, US
IPC
C23F 1/02
C03C 25/06
C03C 15/00
B44C 1/22
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