04799195 is referenced by 74 patents and cites 2 patents.

A semiconductor memory device comprises memory cell transistors each having a double layered gate having a floating gate and a control gate. The memory device comprises a transistor for receiving a predetermined voltage from a source external to the memory device and providing it as a reference voltage in response to a control signal, and a sense amplifier for comparing a voltage dependent on the data read from the memory cell with the reference voltage.

Title
Semiconductor memory device with a sense amplifier
Application Number
822205
Publication Number
4799195
Application Date
March 4, 1988
Publication Date
January 17, 1989
Inventor
Masamichi Asano
Tokyo
JP
Hiroshi Iwahashi
Yokohama
JP
Agent
Finnegan Henderson Farabow Garrett & Dunner
Assignee
Kabushiki Kaisha Toshiba
JP
IPC
G11C 11/40
View Original Source