04790903 is referenced by 23 patents and cites 3 patents.

An intermittent etching process for forming efficiently by reactive ion etching (RIE), a minute recess, such as a groove having an opening width as small as about 0.1 .mu.m, with a large aspect ratio in layers of metals, semiconductors, etc. The process comprises alternating RIE steps of brief duration e.g. 30 seconds with vacuumizing for evacuating gaseous reaction products produced in the RIE step from the etched recess. The process is particularly suitable for formation of a bridging portion of Nb, etc. constituting Josephson devices, by making use of three layered resist technique.

Title
Intermittent etching process
Application Number
17397
Publication Number
4790903
Application Date
March 18, 1988
Publication Date
December 13, 1988
Inventor
Hideharu Miyake
Tokyo
JP
Takuo Sugano
Tokyo
JP
Assignee
University of Tokyo
JP
IPC
H01L 21/312
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